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. 2017 Apr 10;3:17002. doi: 10.1038/micronano.2017.2

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Copyright © 2017 The Author(s)

This work is licensed under a Creative Commons Attribution 4.0 International License. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in the credit line; if the material is not included under the Creative Commons license, users will need to obtain permission from the license holder to reproduce the material. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/

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(a) Cross-sectional image of the TSV after successful dielectric filling by inkjet printing, where the white arrow at the bottom shows the surface of the dielectric layer. (b) Cross-sectional image of the TSV with the Ag UBM layer on top of the dielectric material. Scale bars are 50 μm. TSV, through silicon via; UBM, under bump metallization.