Table 1.
Comparison of the electrical parameters of our RT Al2O3 a-IGZO TFT and other a-IGZO TFTs fabricated at low temperatures (Tmax denotes the maximum process temperature)
| Insulator |
T
max
(°C) |
μ
EF
(cm2 V− 1 s− 1) |
SS (V/dec) |
V
T
(V) |
Ion/off | Ref. |
|---|---|---|---|---|---|---|
| Al2O3 | RT | 19.5 | 0.16 | 0.1 | 4.5 × 108 | This work |
| Al2O3 | RT | 7.5 | 0.44 | – | 3.1 × 108 | [31] |
| Al2O3 | 60 | 5.9 | 0.26 | 2.48 | 108 | [9] |
| SiO2 | RT | 18.5 | 0.27 | 1.5 | 107 | [4] |
| SiO2 | RT | 15.8 | 0.66 | −0.42 | 4.4 × 105 | [23] |
| SiO2 | 90 | 11 | 0.4 | 0.44 | 105 | [32] |
| Ta2O5 | RT | 61.5 | 0.61 | 0.25 | 105 | [10] |