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. 2019 Apr 5;9:5663. doi: 10.1038/s41598-019-41642-y

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© The Author(s) 2019

Open Access This article is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in a credit line to the material. If material is not included in the article’s Creative Commons license and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/.

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Field enhancement in the semiconductor waveguide. (a) Schematics of the field enhancement. The local field enhancement increases moderate pump intensities of 0.05–0.2 TW/cm² provided by the laser to up to 5 TW/cm² and allows for HHG. The SEM picture shows our structure patterned on a bulk ZnO crystal with the dimensions: base size of 4.1 µm in diameter, height of 6.1 µm and top of 2.6 µm. The vertical black thick bar represents 2 µm. (b) Simulation of the intensity distribution in the cone (plane spanned by k- and E-vectors). Significant intensity enhancement occurs on the tip of the cone by a factor larger than 20. The simulation has been done with the experimental parameters. c Intensity enhancement at the exit of the cone (plane perpendicular to the propagation direction) 100 nm below the top surface of the cone.