Table 3.
Effects of ERK inhibition on TTX-R resurgent and transient sodium currents in medium neurons.
| U0124 | U0216 | IM+U0124 | IM+U0126 | ||
|---|---|---|---|---|---|
| INaRn (N)n_s+f | (pA/pF) | 13.7±2.014 (3)1 | 16.4±6.613 (3)2 | 19.7±2.3*13 (3)2 | 11.3±2.89 (2)3 |
| V0.5_mn (N) | (mV) | −27.4±2.314 (3) | −24.1±3.713 (3) | −29.6±3.812 (3) | −31.5±2.88 (2) |
| V0.5_h_TTXSn (N) | (mV) | −70.6±1.914 (3) | −64.1±1.612 (3) | −67.0±2.611 (3) | −65.4±2.48 (2) |
| V0.5_h_TTXRn (N) | (mV) | −35.1±2.513 (3) | −35.3±1.211 (3) | −29.7±1.810 (3) | −37.8±2.27 (2) |
| INaT_TTXSn (N) | (nA/pF) | 0.45±0.0614 (3) | 0.44±0.0713 (3) | 0.53±0.0913 (3) | 0.45±0.089 (2) |
| INaT_TTXRn (N) | (nA/pF) | 0.55±0.0614 (3) | 0.62±0.1013 (3) | 0.97±0.1513 (3) | 0.55±0.129 (2) |
Data are expressed as mean ± SEM. Significant level was set at P < 0.05. A level of P < 0.1 is regarded as a high probability event and might indicate a trend change. INaR: resurgent current; n (N): cell number (culture number); n_s + f: number of medium neurons expressing both slow and fast resurgent currents; V0.5_m: half activation voltage; V0.5_h_TTXS: half inactivation voltage of the TTX-S currents; V0.5_h_TTXR: half inactivation voltage of the TTX-R currents; INaT_TTXS: TTX-S transient current; INaT_TTXR: TTX-R transient current.
*P < 0.1; Student’s t-test, IM+U0124 versus U0124.