Table 4.
DMSO | BIM I | IM | IM+BIM I | ||
---|---|---|---|---|---|
INaRn (N)n_s+f | (pA/pF) | 10.2±3.411 (4)2 | 12.7±5.07 (2)1 | 24.4±6.3*13 (4)1 | 18.3±5.89 (4)1 |
V0.5_mn (N) | (mV) | −44.5±3.69 (4) | −41.2±4.27 (2) | −46.0±5.711 (4) | −45.5±3.49 (4) |
V0.5_h_TTXSn (N) | (mV) | −60.0±0.78 (3) | −62.6±2.27 (2) | −62.3±1.08 (3) | 64.8±2.19 (3) |
V0.5_h_TTXRn (N) | (mV) | −31.3±1.97 (3) | −30.0±1.87 (2) | −32.3±0.87 (3) | −31.8±0.99 (3) |
INaT_TTXSn (N) | (nA/pF) | 0.61±0.0711 (4) | 0.56±0.117 (2) | 0.81±0.1513 (2) | 0.56±0.109 (2) |
INaT_TTXRn (N) | (nA/pF) | 0.75±0.1011 (4) | 0.78±0.207 (2) | 0.75±0.2013 (4) | 0.65±0.099 (4) |
Data are expressed as mean ± SEM. INaR: resurgent current; n (N): cell number (culture number); n_s + f: number of medium neurons expressing both slow and fast resurgent currents; V0.5_m: half activation voltage; V0.5_h_TTXS: half inactivation voltage of the TTX-S currents; V0.5_h_TTXR: half inactivation voltage of the TTX-R currents; INaT_TTXS: TTX-S transient current; INaT_TTXR: TTX-R transient current; DMSO: dimethyl sulfoxide; BIM I: bisindolylmaleimide I.
*P < 0.1; Student’s t-test, IM versus DMSO.