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. 2019 Apr 10;10:1661. doi: 10.1038/s41467-019-09650-8

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© The Author(s) 2019

Open Access This article is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in a credit line to the material. If material is not included in the article’s Creative Commons license and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/.

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Box Fig. 1. — a High-resolution imaging of static domain structures: 50-nm-thick PbTiO₃ film with ac domains (the image size is 5 × 5 µm²). b Investigation of domain wall dynamics (adapted with permission from ref. ⁷⁵); c high-density data storage: electrical writing of stable domains with the characteristic size <40 nm in a BaTiO₃ thin film (the image size is 1.50 × 0.85 µm²); d investigation of fast domain switching kinetics: visualization of nanodomain nucleation during polarization reversal in an epitaxial Pb(Zr,Ti)O₃ ferroelectric capacitor (the image size is 6 × 6 µm²) (reprinted from ref. ⁹³, with the permission of AIP publishing); e Polarization control in µm-scale thin film Pb(Zr,Ti)O₃ capacitors: upper row capacitors poled by negative voltage pulses, bottom row capacitors poled by positive pulses (the image size is 5 × 6 µm²) (reprinted from ref. ⁹⁴, with the permission of AIP publishing). f Spectroscopic testing of local switching parameters: hysteresis loops acquired at different locations on the ferroelectric surface (reprinted with permission from ref. ³)