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. 2019 Apr 15;9:6048. doi: 10.1038/s41598-019-42663-3

Figure 5.

Figure 5

Dark I-V characteristics of the fabricated TiN-Si junction for different TiN contact areas - diameter d = 100 μm and d = 200 μm for (a) n-doped and (b) p-doped Si respectively.