Figure 10.

(a): bP nanosheets embedded in PMMA, on a Si/SiO₂ substrate. (b) Optical microscopy after device fabrication. The scale bar is 10 µm. (c) Current (I_sd) vs. voltage (V_sd) characteristics of the device at room temperature. Resistance R = 14.8 kOhm. (d) Low temperature measurements at 4.2 K. Source‐drain current as a function of gate voltage V_g (V _sd = 1 mV) shows p‐type behavior. Field‐effect mobility 35 cm² V^–1 s^–1. I _sd vs. V _sd curve, shown in the inset, gives 108 kOhm. Adapted from Figure 2f and Figure 3e of ref.85 Copyright (2018) The Authors.