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. 2018 Dec 21;2019(11-12):1476–1494. doi: 10.1002/ejic.201801219

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© 2019 The Authors. Published by Wiley‐VCH Verlag GmbH & Co. KGaA.

This is an open access article under the terms of the http://creativecommons.org/licenses/by-nc/4.0/ License, which permits use, distribution and reproduction in any medium, provided the original work is properly cited and is not used for commercial purposes.

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(a) Optical reflection microscopy image of a bP FET. The longitudinal resistance R _xx is measured with voltage probes 1 and 2. (b) Weak localization measurements. A weak localization peak is observed in this plot of the normalized longitudinal resistance [R _xx(B) – R _xx(0)]/R _xx(0) vs. magnetic field B and gate voltage V _g at T = 0.26 K. (c) The inelastic scattering length L _φ vs. temperature T at various gate voltages V _g. The T ^–1/2 temperature dependence associated with electron‐electron scattering in the 2D diffusive limit is shown for comparison, as well as a T ^–1/3 power law. Adapted from ref.133 Copyright (2016) The Authors.