Skip to main content
. 2018 Oct 19;10(44):38264–38271. doi: 10.1021/acsami.8b14408

Figure 1.

Figure 1

MoS2/PbS QD hybrid structure design and architecture. (a) An illustration of our hybrid-structured phototransistor. The illustration of the monolayer MoS2 and PbS QDs are enlarged in the inset. (b) Optical microscopy image of the MoS2 device fabricated using electron-beam lithography. (c) Three-dimensional atomic force microscopy image of the MoS2/PbS QDs hybrid structure. (d) Illustration of the band alignments of the MoS2/PbS–TBAI and MoS2/PbS–TBAI/PbS–EDT structures. Note that the large built-in potential is created within the QD layers for the MoS2/PbS–TBAI/PbS–EDT device.