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. 2018 Oct 19;10(44):38264–38271. doi: 10.1021/acsami.8b14408

Figure 3.

Figure 3

Photoresponse of the MoS2/PbS QDs devices. (a) Temporal response of the photocurrent in the MoS2/TBAI and MoS2/TBAI/EDT devices under 850 nm laser illumination with Vd = 1 V, Vg = 0 V, Plaser = 200 nW. (b) Temporal response of the photocurrent showing a distinctly different response time when the incident energy (850 or 532 nm) is either smaller or larger than the band gap of the MoS2 monolayer.