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Process parameters for LTO annealing and NCG growth.
| T, (°C) | t, (min) | Heat ramp (°C/min) | PRF., (W) | P, (mTorr) | Ar flow (sccm) | H2 flow (sccm) | CH4 flow (sccm) | |
|---|---|---|---|---|---|---|---|---|
| Heat-up | 200↗900 | – | 15 | – | 3000 | 1500 | 75 | – |
| Si/SiO2 (LTO) annealing | 900 | 10 | – | – | 3000 | 1500 | 75 | |
| Hydrogen annealing | 900 | 5 | – | – | 1500 | 1500 | 200 | – |
| Deposition | 900 | 120 | – | 100 | 1500 | – | 75 | 60 |
| Cool-down | 900↘200 | – | 9 | – | 1500 | 1500 | – | – |
