Specifications table

Subject area	Electrochemistry, Materials science, Nanotechnology
More specific subject area	Electrode material development
Type of data	Image (atomic force microscopy – AFM, scanning electron microscopy – SEM), graph (Raman spectroscopy, X-ray diffraction – XRD), table (process parameters for using plasma-enhanced chemical vapour deposition – PECVD).
How data was acquired	Atomic force microscope (Ntegra Aura Scanning Probe Microscope, NT_MDT Spectrum Instruments) operated in intermittent-contact mode; scanning electron microscope (Nova NanoSEM 630, FEI Company, USA) working at 20 kV accelerating voltage, under high vacuum (HV) conditions and using Through the Lens Detector (TLD); confocal microscope (WITec alpha300 S, WITec, GmbH, Germany) with a 20X lens and 532 nm excitation wavelength was used to acquire the Raman spectrum; 9kW rotating anode X-ray diffraction system (Rigaku SmartLab, Japan) that employs Cu Kα1 radiation (λ = 1.54056 Å); PECVD growth (NANOFAB 1000, Oxford Instruments, UK).
Data format	Raw, analyzed
Experimental factors	Electrochemical activation of the nano-crystalline graphite film at 3 mA applied current, during 240 s, in 10 mM phosphate buffer saline (PBS) solution containing 0.1 M KCl, pH 7.
Experimental features	A 4″, Si-n, <100>, 1–3 Ω cm wafer bearing 110 nm SiO2 was heated up to 900 °C (15 °C min−1) in Ar/H2 (5%) atmosphere, annealed during 10 minutes, allowing an additional surface hydrogenation step for 5 more minutes in Ar/H2 (10%) atmosphere, after the ultimate process temperature was reached. The nano-crystalline graphite (NCG) film was grown starting from CH4 and H2 (60 sccm/75 sccm), using 100 W power plasma, at 900 °C and 1.5 Torr, up to a thickness of ∼350 nm. The working parameters of the PECVD process are detailed in Table 1. The NCG film grew on Si/SiO2 substrate was used as working electrode during several electrochemical investigations, alongside with Ag/AgCl reference electrode and Pt wire serving as counter electrode.
Data source location	National Institute for Research and Development in Microtechnology – IMT Bucharest, 126A Erou Iancu Nicolae Street, 077190, Voluntari, Ilfov county, Romania
Data accessibility	The data presented in this article are accessible within this article.
Related research article	C. Albu, S.A.V. Eremia, M.L. Veca, A. Avram, R.C. Popa, C. Pachiu, C. Romanitan, M. Kusko, R. Gavrila, A. Radoi, Nano-crystalline graphite film on SiO2: Electrochemistry and electro-analytical application, Electrochim. Acta, 303, 2019, 284–292 [1].