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. 2019 Apr 26;6(2):024102. doi: 10.1063/1.5089517

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© 2019 Author(s).

2329-7778/2019/6(2)/024102/11

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FIG. 3. — In our computational model, we use (a) an exponential decay of the intensity of the laser in the z-direction according to Lambert-Beer, and (b) a linear variation of the laser intensity in the y-direction. (c) FDTD calculation (blue line) of the laser intensity as function of z position in the GaAs at the center of the photoconductive switch. The glass-GaAs interface is located at z = 0. The red line is the laser intensity used in the calculation in Comsol. (d) FDTD calculation of the laser intensity as function of x at a depth of 10 nm below the glass-GaAs interface. The red line is the laser intensity assumed in the Comsol calculation. A broadband p-polarized plane wave located above the ground plate is injected in the FDTD simulation, and the resulting laser intensity is integrated over a range from 750 to 850 nm.