Fig. 5.
Monitoring GABA molecule through silicon nanowire-based FET device. a Reproducible conductance signal observed through selected concentrations of GABA molecule. b Conductance versus time data on GABA antibody modified p-type silicon nanowire after applying the target molecule (GABA) after applying the target molecule (GABA) range from 970 fM to 9.7 μM. c The calculated linear correlations between the concentration of GABA and conductance change of a p-type silicon nanowire-based FET device