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. 2019 Apr 25;15:156–164. doi: 10.1016/j.isci.2019.04.025

Figure 5.

Figure 5

Junction Properties and Carrier Behaviors in C-PSCs

(A–C) (A) Mott-Schottky analysis at 10 kHz for CsPbI3 and Cs0.95Na0.05PbI3 C-PSCs. UV photoelectron spectroscopy of CsPbI3 and Cs0.95Na0.05PbI3 films: (B) cutoff region and (C) valence band edge region.

(D–F) (D) Energy level diagrams of CsPbI3 and Cs0.95Na0.05PbI3 C-PSCs, which were obtained from the UV photoemission spectroscopy results. Energy level diagram of the (E) CsPbI3/carbon and (F) Cs0.95Na0.05PbI3/carbon interfaces. EVBM represents the energy level of valence band maximum, ECBM represents the energy level of conduction band minimum, and Ef represents the Fermi level.