Table 1.

Average electron mobilities of IGZO, In₂O₃, and IZO TFTs on 300 nm SiO₂/Si substrates processed by the indicated methods

Method	Performance parameters	IGZO				In2O3			IZO
		225 °C/20 min	250 °C/60 s	300 °C/10 s	300 °C/60 s	225 °C/20 min	250 °C/60 s	300 °C/10 s	250 °C/60 s	300 °C/10 s
CS	µ (cm2 V−1 s−1)	0.17 ± 0.08	0.10 ± 0.05	0.19 ± 0.10	0.41 ± 0.10	0.21 ± 0.13	0.50 ± 0.06	1.25 ± 0.21	0.33 ± 0.05	0.31 ± 0.05
	VT (V)	27.96 ± 10.20	31.37 ± 16.16	45.24 ± 10.16	10.50 ± 1.89	28.85 ± 5.32	−18.5 ± 4.68	−2.27 ± 1.82	−20.75 ± 3.22	−13.25 ± 2.70
	Ion/Ioff	106	105	105	106	104	103	103	105	105
FA-CS	µ (cm2 V−1 s−1)	0.19 ± 0.11	0.08 ± 0.03	0.35 ± 0.14	1.62 ± 0.21	0.24 ± 0.13	0.32 ± 0.08	2.16 ± 0.33	0.28 ± 0.07	0.83 ± 0.24
	VT (V)	26.70 ± 10.13	33.24 ± 17.25	21.17 ± 7.63	3.34 ± 1.75	26.70 ± 5.08	9.23 ± 2.85	−12.08 ± 2.85	−2.29 ± 1.72	12.4 ± 1.68
	Ion/Ioff	106	105	106	106	105	104	103	106	105
P-CS	µ (cm2 V−1 s−1)	0.78 ± 0.20	0.29 ± 0.08	1.60 ± 0.22	3.67 ± 0.72	2.96 ± 0.50	2.94 ± 0.45	5.20 ± 0.62	2.32 ± 0.38	2.37 ± 0.45
	VT (V)	21.59 ± 6.54	29.15 ± 8.86	11.12 ± 4.74	4.28 ± 1.02	−19.90 ± 4.56	10.49 ± 3.41	−23.98 ± 4.55	−3.13 ± 2.50	12.01 ± 1.24
	Ion/Ioff	107	106	106	107	104	104	104	106	105
P-FA-CS	µ (cm2 V−1 s−1)	0.92 ± 0.25	0.20 ± 0.09	2.05 ± 0.52	5.44 ± 1.22	3.82 ± 0.77	2.28 ± 0.33	6.52 ± 0.74	2.11 ± 0.32	3.78 ± 0.59
	VT (V)	16.49 ± 3.56	20.8 ± 5.49	7.56 ± 2.43	3.61 ± 0.61	−24.87 ± 3.85	−26.97 ± 6.30	−45.86 ± 8.85	−22.15 ± 2.23	9.20 ± 2.58
	Ion/Ioff	107	106	106	107	103	104	103	106	105

The results were measured from 3 batches having more than 30 devices.