Table 5.
Summary of performance and its comparison with those of other RF-DC rectifiers and RF-energy-harvesting ICs.
| Reference (year) |
[30] (2018) |
[31] (2018) |
[32] (2016) |
[33] (2017) |
This Work |
|---|---|---|---|---|---|
| Process (μm) | 0.13 | 0.18 | 0.18 | 0.13 | 0.18 |
| RF frequency (MHz) | 915 | 900 | 900 | 2000 | 915 |
| Matching circuits | Off-chip | Off-chip | Off-chip | Off-chip | Off-chip |
| Input power range (dBm) | −35 ~ −15 | −30 ~ +0 | −26 ~ −8 | −35 ~ +5 | −20 ~ +10 |
| Stages (Rectifier) | 10 | 5 | 2 | 3 | 6 |
| Maximum PCE (Rectifier) | 42.8%@ Pin = −16 dBm | — | 78.2%@ Pin = −12 dBm | 73.9%@ Pin = 4.34 dBm | 43.6%@ Pin = −7 dBm |
| Output voltage (V) (Rectifier) | 2.32 | — | 1.0 | 3.5 | 1.725 |
| Maximum PCE (RF harvesting IC) |
— | 32.8%@ Pin = −2 dBm | — | — | 40.56%@ Pin = −6 dBm |
| Output voltage (V)(RF harvesting IC) | — | 1.77 | — | — | 1.50 |
| Load resistor (kΩ) | 500 | 500 | — | 2 | 30 |
| Chip area (mm2) | 0.0296 | 16.56 | — | 0.954 | 0.2842 |
| Power (μW) | — | — | — | — | 42 |