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. 2019 May 14;9:7334. doi: 10.1038/s41598-019-43667-9

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© The Author(s) 2019

Open Access This article is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in a credit line to the material. If material is not included in the article’s Creative Commons license and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/.

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Optoelectronic properties of the CuO photodetectors. (a) I_ph-V curves of the CuO photodetector annealed at 700 °C under various light intensities. (b) Measured I_light/I_dark at 3 V bias of the device annealed at 700 °C under monotonically increase and decrease of the light intensity. (c) Time-dependent current normalized with initial value under different light intensities at 3 V bias. (d) Responsivity and (e) detectivity as a function of light intensity for devices fabricated at various annealing temperatures measured at 3 V bias. (f) Response time of the devices annealed at various annealing temperatures under the light intensity of 2.92 mW/cm² with 3 V bias. (g) Schematic illustration of speculated operation principle and features in the CuO photodetector having different grain structures.