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. 2019 May 24;5(5):eaav5003. doi: 10.1126/sciadv.aav5003

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Copyright © 2019 The Authors, some rights reserved; exclusive licensee American Association for the Advancement of Science. No claim to original U.S. Government Works. Distributed under a Creative Commons Attribution NonCommercial License 4.0 (CC BY-NC).

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Fig. 3 — Comparison between simulated and experimental HAADF-STEM images (the case of sulfur vacancies and a CH dopant occupying a sulfur vacancy) is shown. Experimental atomic-resolution HAADF-STEM image of the carbon-doped monolayer WS₂ (A) shows an area with both sulfur vacancies (V_S; yellow circles) and the CH dopant occupied sulfur monovacancies (CH@V_S; blue circles) in the carbon-doped monolayer WS₂. (B) and (D) show a sulfur monovacancy and its corresponding intensity line profiles, and (C) and (E) show the CH@V_S and its corresponding intensity line profiles. (F and G) Simulated HAADF-STEM image of the carbon-doped monolayer WS₂ with (F) V_S and (G) a CH@V_S in the hexagonal lattice. (H) Intensity line profile of the STEM image simulations with V_S and CH@V_S in the doped monolayer WS₂.