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. 2019 May 28;10:2349. doi: 10.1038/s41467-019-10282-1

Fig. 3.

Fig. 3

Fabricated RAFT spectrometer. a False-colored optical micrography of a RAFT spectrometer after Ge epitaxy growth for PD. b SEM image of an MRR without SiO2 upper cladding. c SEM image of a tunable MRR with isolation trenches and TiN heater. d Optical micrography of a waveguide-coupled Ge-on-SOI photodetector