. Author manuscript; available in PMC: 2019 May 30.

Published in final edited form as: J Phys Chem B. 2017 Sep 14;121(38):8991–9005. doi: 10.1021/acs.jpcb.7b05885

Table 1.

Gas Flow Rates for Silicon Oxynitride (Si–O–N) Layer Deposition as They Relate to Their Measured Index of Refraction by Ellipsometry

			gas flow rates (sccm)
sample	refractive index	deposition rate (angstroms/min)	N₂O/SiH₄	15% SiH₄/Ar	N₂O	N₂	NH₃
1	2.0	320	0	24	0	225	50
2	1.82	360	0.13	24	3	225	50
3	1.65	390	0.67	24	16	225	50
4	1.57	520	6.46	24	155	225	50
5	1.45	550	6.67	24	160	225	50