Table 3.
Calculations for the RMM and RBM Mathematical Models for Si–O–N Filmsa
| RMM, [Si–Si]–[Si–O]–[Si–N] |
RBM, SizOxNy |
partial charge (Pi) |
|||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|
| sample | a:b | Si–Si | Si–O | Si–N | z | x | y | Si | O | N | ∑Pi |
| Si3N4 | 1.73 | 0.02 | 0.04 | 0.94 | 1.00 | 0.00 | 1.33 | 0.24 | 0.00 | −0.18 | 0.00 |
| 1 | 1.72 | 0.05 | 0.11 | 0.83 | 1.00 | 0.14 | 3.86 | 0.36 | −0.21 | −0.09 | 0.00 |
| 2 | 1.7 | 0.01 | 0.35 | 0.64 | 1.00 | 0.49 | 3.51 | 0.38 | −0.20 | −0.08 | 0.00 |
| 3 | 0.01 | 0.63 | 0.36 | 1.00 | 1.24 | 2.76 | 0.40 | −0.18 | −0.06 | 0.00 | |
| 4 | 1.2 | 0.08 | 0.90 | 0.02 | 1.00 | 3.65 | 0.35 | 0.49 | −0.13 | −0.01 | 0.00 |
| 5 | 1.15 | 0.00 | 1.00 | 0.00 | 1.00 | 4.00 | 0.00 | 0.51 | −0.13 | 0.00 | 0.00 |
| SiO2 | 1.02 | 0.01 | 0.99 | 0.00 | 1.00 | 2.00 | 0.00 | 0.40 | −0.20 | 0.00 | 0.00 |
a
a:b represents the peak area ratio based on XANES analysis of the silicon L-edge. Partial charge calculations assert the validity of the RBM model (∑Pi = 0).