Fig. 4.

Work mechanism of the proposed devices. a Transient photoluminescence decay curves measured at 470 nm with an excitation wavelength of 350 nm. Film 1 consists of DPEPO:30% DMAC-DPS (20 nm); film 2 is DPEPO:30% DMAC-DPS:0.5% FDQPXZ (20 nm); film 3 is DPEPO:30% DMAC-DPS:1% FDQPXZ. b Current density–voltage (J–V) characteristics of the hole-only device with the structure of ITO/HATCN (10 nm)/TAPC:HATCN (20 wt%, 50 nm)/TAPC (20 nm)/DPEPO:25% DMAC-DPS (20 nm) or DPEPO:25% DMAC-DPS:1.0% FDQPXZ (20 nm)/TAPC (20 nm)/TAPC:HATCN (20 wt%, 50 nm)/HATCN (10 nm)/Al. c Illustrated schematics of the work mechanism consisting of two parallel channels: efficient energy transfer and direct exciton formation process