Table 1.
Device | Von a (V) | Max EQEb [%] | Max CEb [cd A-1] | Max PEb [lm W-1] | CRIc | CIEc (x, y) | Performance at the brightness of 100/1000 cd m−2 | ||
---|---|---|---|---|---|---|---|---|---|
EQE [%] | CE [cd A-1] | PE [lm W-1] | |||||||
Single-EML | 2.7 | 14.1 | 39.4 | 45.8 | 64 | (0.342, 0.453) | 12.2/9.7 | 33.5/27.3 | 34.0/19.5 |
Double-EML | 2.8 | 15.7 | 39.1 | 41.0 | 70 | (0.322, 0.414) | 12.3/9.3 | 30.4/23.0 | 28.4/17.3 |
Proposed EML | 2.6 | 20.5 | 51.3 | 59.6 | 72 | (0.326, 0.413) | 18.8/13.0 | 46.5/31.9 | 52.4/31.7 |
aTurn-on voltages at 1.0 cd m−2; bmaximum external quantum efficiency, maximum power efficiency; cCommission Internationale de L’Eclairage (CIE), color rendering index (CRI) at the brightness of 1000 cd m−2