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. 2019 Jun 3;9:8235. doi: 10.1038/s41598-019-44689-z

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© The Author(s) 2019

Open Access This article is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in a credit line to the material. If material is not included in the article’s Creative Commons license and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/.

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Acoustoelectric characteristics of the device. (a) The schematic plot of the I_ae measurement setup. (b) The quiescent performance of acoustoelectric current I_ae as a function of V_g at different RF-power P_IDT1 applied on ITD1 at 191 MHz. Note that IDT2 remains unactivated. The majority carriers change from p- to n- type as the Fermi level is tuned across CNP, which causes a sign reversal of I_ae. (c) I_ae versus V_g traces with various P_IDT2 applied on IDT2. Here P_IDT1 is kept at −10 dBm and both IDTs are operated at 191 MHz. When P_IDT2 increases larger than 2 dBm, the polarity of measured I_ae changes. (d) Acoustoelectric current as a function of P_IDT1 at various V_g. Data are extracted from (b).