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. 2019 Jun 4;14:191. doi: 10.1186/s11671-019-3025-8

Fig. 5.

Fig. 5

a Schematic depicting application of stress voltage during the pulsed IDS-VDS measurements. Pulsed IDS-VDS characteristics of the fabricated AlGaN/GaN HEMTs with b FPL HEMT, c FBL HEMT, and d Conv. HEMT (VGS = − 4~0 V; step: 0.5 V)