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. 2019 Apr 30;10(5):293. doi: 10.3390/mi10050293

Table 1.

Material selection of high-k dielectric and metal gate from 45-nm to 5-nm nodes.

Technology Nodes Film Thickness (nm)
Thermal Oxide High-k TiAl(N) TiN
45 nm ~1.2 ~1.5 ~2 ~2.1
32 nm ~1.2 ~1.1 ~1.7 ~2
22 nm ~1.1 ~1.0 ~1.2 ~1.4
14 nm ~0.6 ~1.2 ~1.2 ~1.4
5 nm ~0.5 ~1.0 ~1.0 ~1.2