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. 2019 Jun 13;10:2594. doi: 10.1038/s41467-019-10621-2

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Open Access This article is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in a credit line to the material. If material is not included in the article’s Creative Commons license and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/.

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Fig. 2 — Mechanism of CeO_2−x thin-film deposition. Voltammograms obtained at a scan rate of 300 mV s⁻¹: a 1st cycle. b 25th cycle. c 50th cycle. d Schematic of Ce(OH)₄ nanostructure deposited during forward scanning. e Schematic of mixed Ce(OH)₄ + CeO₂ nanostructure during chemical (non-faradaic) conversion during forward scanning. f Schematic of CeO_2−x nanostructure formed during reverse scanning