Figure 3.
Simplified fabrication process of vertical nanogap electrodes separated by a thin spacer layer. (a) 4” Si wafer, (b) Thermally grown 300 nm SiO2, (c) Deposit 200 nm Au bottom electrode and (d) pattern lithographically, (e) Deposit spacer layer, (f) Deposit 200 nm top Au electrode and (g) pattern, (h) SF6 dry etch to form nanogap.