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. 2019 Jun 14;10:2657. doi: 10.1038/s41467-019-10693-0

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© The Author(s) 2019

Open Access This article is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in a credit line to the material. If material is not included in the article’s Creative Commons license and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/.

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Fig. 3 — Calculated magnetocrystalline anisotropy of Cr₂Ge₂Te₆ in the heterostructure versus the vdW interlayer distance. Magnetocrystalline anisotropy energy (MAE) (in meV/Cr) of Cr₂Ge₂Te₆ as a function of the distance to In₂Se₃ in the P_dn state, showing a gradual increase towards the positive MAE (easy-axis S_Cr) upon decreasing the distance for both hollow and top stacking configurations. This set of calculations confirmed the scenario that the enhanced interfacial hybridization between Cr₂Ge₂Te₆ and In₂Se₃ tends to switch the magnetocrystalline anisotropy from easy-plane to easy-axis. The calculation error is reflected by the symbol size (~0.01 meV/Cr). The red and blue dashed lines correspond to the equilibrium interfacial distances for hollow and top stacking configurations, respectively