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. 2019 Jun 28;10:2842. doi: 10.1038/s41467-019-10856-z

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© The Author(s) 2019

Open Access This article is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in a credit line to the material. If material is not included in the article’s Creative Commons license and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/.

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Fig. 3 — Photovoltaic performance of solar cells. a Cross-sectional STEM-HAADF image of devices with the structure of Glass/ITO/TiO₂/Cs_0.25FA_0.75PbI₃/CsPbI₃/spiro-OMeTAD/MoO_x/Al. b, c J–V curves recorded by reverse scans (from open circuit to short circuit) and SPO at 0.95 V of devices with different thickness ratio of Cs_0.25FA_0.75PbI₃ layer to CsPbI₃ layer in the perovskite QD absorber, respectively. d, e J–V curves measured via reverse scans and SPO at 0.95 V of devices with different compositions of the bottom layer in the perovskite QD absorber where the heterojunction position is constant