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| Property | Silicon (Si) | Gallium Nitride (GaN) | Silicon Germanium (SiGe) | Gallium-Arsenide (GaAs) | Indium Phosphide (InP) |
|---|---|---|---|---|---|
| Bandgap energy (eV) | 1.12 | 3.42 | 0.945 | 1.42 | 1.34 |
| Electron mobility (cm2/V-s) | 1360 | 2000 | 7700 | 8500 | 5400 |
| Breakdown of electric field (V/cm) | 2 × 105 | 3.5 × 106 | 4 × 105 | 4 × 105 | 5 × 105 |
| Saturation electron drift velocity (cm/s) | 107 | 2.5 × 107 | 13.5 | 1.2 × 107 | 2 × 107 |
| Relative dielectric constant (εr) | 11.7 | 9 | - | 12.9 | 12.5 |
