Table 1.
Electrophysiological characteristics of genetically identified PV+ and ChAT+ MSDB neurons
| PV+ | ChAT+ | p-value | |
|---|---|---|---|
| Passive properties | |||
| Vm (mV) | −79.7 ± 1.7 | −83.2 ± 4.6 | 0.0360 |
| Rinp (MΩ) | 194.7 ± 104.9 | 279.9 ± 188.8 | 0.2231 |
| τmem (ms) | 12.7 ± 5.7 | 18.5 ± 14.4 | 0.2529 |
| Active properties | |||
| APthr (mV) | −53.7 ± 8.2 | −51.1 ± 4.9 | 0.4127 |
| APampl (mV) | 69.8 ± 11.8 | 62.3 ± 6.7 | 0.0923 |
| APdV/dt (mV/ms) | 318.5 ± 110.3 | 133.8 ± 63.3 | 0.0002 |
| APHalf-width (ms) | 0.31 ± 0.08a | 0.96 ± 0.23 | 1 × 10−7 |
| fAHP (mV) | −16.6 ± 6.0 | −10.1 ± 5.8 | 0.0202 |
Comparison of passive and active properties of PV+ (n = 10) and ChAT+ (n = 11) MSDB neurons identified by genetically targeted eYFP expression. Vm, Resting membrane potential; Rinp, input resistance; τmem, membrane time constant; APthr, action potential threshold; APampl, action potential amplitude; APdV/dt, maximal action potential rise slope; APHalf-width, action potential width at half maximal amplitude. Values represent mean ± SD p-values (t test) and indicate statistical difference between PV+ and ChAT+ neurons.
aOne outlier assessed by applying Chauvenet's criterion was excluded.