Fig. 1. Tuning of the conductance plateau of device 1 and quantum dot model.
(A) Schematics and scanning electron micrograph of device 1. (B) Normal-state (B = 2.9 T) measurement of the linear conductance, G, as a function of VG2 and VG3 (in this color plot, black corresponds to G > 2e2/h). Near pinch-off, two conductance plateaus appear at G ≈ 0.9e2/h and 1.8e2/h. (C) G(VG3) curves taken at VG2 = −0.975, −1, and − 1.05 V [dashed lines in (B)]. (D) Left: G(VG3) curves measured at different B (VG2 = −1 V). The conductance of the 0.9e2/h plateau remains unchanged within the explored B range. Right: NRG simulations of G(VG3) at different values of the Zeeman energy, Ez, normalized to the charging energy U. The experimental and theoretical curves are shifted horizontally for clarity. Inset: Schematic representation of a camel-shape, conduction-band profile created by the local gates and the associated charge localization. (E and F) Representation of the single impurity Anderson model used to calculate (E) the normal-state conductance in (D), and (F) the Josephson current in Fig. 3 (E to H).