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. 2019 Jul 16;9:10301. doi: 10.1038/s41598-019-46186-9

Figure 2.

Figure 2

Bird-view SEM images of vertically aligned n-p-n GaN nanowire (NW) arrays after ICP-DRIE and wet chemical etching with NW numbers of (a) 1, (b) 9, and (c) 100. Varied wire diameters (D) of (d) (221 ± 9) nm, (e) (443 ± 7) nm, and (f) (647 ± 8) nm were obtained originating from different pattern sizes of the used Cr etching mask.