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. 2019 Jul 16;9:10301. doi: 10.1038/s41598-019-46186-9

Figure 3.

Figure 3

(a) Optical micrograph of a GaN FET device under test using a source meter unit (SMU) and probing tips. SEM images of vertical n-p-n GaN NW FETs consisting of (b) 1, (c) 9, and (d) 100 NWs.