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. 2019 Jul 16;9:10301. doi: 10.1038/s41598-019-46186-9

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© The Author(s) 2019

Open Access This article is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in a credit line to the material. If material is not included in the article’s Creative Commons license and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/.

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Experimental (exp.) and simulation (sim.) results showing (a) output and (b) transfer characteristics for single NW FETs of different diameters. (c) Simulated output and (d) transfer characteristics of different L_ext on single NW FETs with diameter of 220 nm and surface charge Q_sc = −(3.9 ± 0.2) × 10¹¹ cm⁻². The exp. data are used for comparison, which fit well with simulated results of FET with L_ext of −25nm. (e) Simulated output and (f) transfer characteristics of different Q_sc on NW sidewall in case of single NW FETs with diameter of 220 nm and L_ext = −(21 ± 4) nm.