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. 2019 Jul 16;9:10301. doi: 10.1038/s41598-019-46186-9

Table 1.

DC characteristic results of vertical n-p-n GaN NW FETs (average value) with NW numbers of 1, 9, and 100 and a diameter of 440 nm.

Number of NW (#) Vth (V) Id,max (µA) Id,max_norm (µA/µm) Ion/Ioff Ion/Ioff_norm
1 (6.4 ± 0.2) (3.2 ± 2.1) (2.3 ± 1.5) 105 105
9 (6.6 ± 0.3) (33.5 ± 9.9) (2.6 ± 0.9) 106 105
100 (6.4 ± 0.5) (230.7 ± 59.4) (1.7 ± 0.4) 107 105