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. 2019 Jul 16;9:10301. doi: 10.1038/s41598-019-46186-9

Table 2.

DC characteristic results of single vertical n-p-n GaN NW FETs (average value) with three different diameters of 220 nm, 440 nm, and 640 nm.

Diameter of NW (nm) Vth (V) Id,max (µA) Id,max_norm (µA/µm)
220 (6.6 ± 0.6) (2.2 ± 0.8) (3.2 ± 2.0)
440 (6.4 ± 0.2) (3.2 ± 2.1) (2.3 ± 1.5)
640 (6.3 ± 0.3) (9.5 ± 4.1) (4.5 ± 2.1)