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. 2019 Jun 2;597(13):3473–3502. doi: 10.1113/JP277726

Table 1.

Parameters governing membrane voltage dynamics

Parameter Symbol Value
Avogadro number N a 6.023 × 1023 mol−1
Electric charge per Ca2+ ion q Ca 3.2 × 10−19 C
Volume of (spherical) ER/ER+ spine head V spine 0.06 μm3
Resting membrane potential in spine/dendrite u rest −70 mV
Resistive coupling between spine head and parent dendrite R C 100 MΩ
AMPAR conductance parameter g A 0.5 nS
AMPAR rise time constant τr A 0.2 ms
AMPAR decay time constant τd A 2 ms
AMPAR current reversal potential E A 0 mV
NMDAR conductance parameter g N 65 pS in model synapse (gives ∆CaEPSP = 0.2 μm)
NMDAR rise time constant τr N 5 ms
NMDAR decay time constant τd N 50 ms
NMDAR current reversal potential E N 0 mV
VGCC activation offset u m −20 mV
VGCC activation slope k m 5 mV
VGCC activation time constant τm 0.08 ms
VGCC inactivation offset u h −65 mV
VGCC inactivation slope k h −7 mV
VGCC inactivation time constant τh 300 ms
Maximum depolarization during BAP in dendritic compartment V 0 +67 mV
Fast time constant of BAP decay τf 3 ms
Slow time constant of BAP decay τs 40 ms
Effective number of co‐active synaptic inputs at dendritic compartment (rate‐dependent plasticity) ρS 5 × 105 cm−2