Fig. 3.

Stability and switching speed of our self-selective memory. a Endurance of switching behavior among the three states by a voltage pulse train over 10⁶ measurement cycles. The resistance states were read by a wide pulse width to avoid the net charge (See Methods). b Retention behavior of the three states for a time of 10⁶ s. c Switching speed during programming operation shows a time constant of tens of nanoseconds. A voltage pulse of 10 V for 500 ns was used for the measurement. d Stability of the three states (low-resistance state, high-resistance state, and unselected state) over temperatures ranging from 290 to 450 K, due to the high crystal quality of hexagonal boron nitride and graphene