Table 2. Wide-Band Gap 1 Semiconductors with IB Ranging from 2.62 to 3.15 eV.
| serial no. | chemical formula | Pearson symbol | space group number | band gap (Evi) | band gap (Eci) | width of IB (ΔEi) | total band gap (Eg) | band gap type |
|---|---|---|---|---|---|---|---|---|
| 1. | CuAgPO4 | oP56 | 61 | 1.27 | 0.61 | 0.74 | 2.62 | DB |
| 2. | Ag2ZnSnS4 | tI16 | 121 | 0.47 | 0.57 | 1.66 | 2.70 | DB |
| 3. | Au2Cs2Br6 | tI20 | 139 | 0.67 | 1.23 | 0.81 | 2.71 | DB |
| 4. | Ag3AsS4 | oP16 | 31 | 0.73 | 1.04 | 1.00 | 2.77 | DB |
| 5. | Ag2KSbS4 | tI16 | 121 | 0.81 | 1.08 | 0.94 | 2.93 | ID |
| 6. | Na3Se4Sb | cI16 | 217 | 1.02 | 1.24 | 0.71 | 2.97 | DB |
| 7. | AgK2SbS4 | oP32 | 118 | 1.52 | 1.03 | 0.47 | 2.97 | DB |
| 8. | AsRb3Se4 | oP32 | 62 | 1.32 | 0.98 | 0.97 | 3.15 | DB |