Table 2. Definition of the Abbreviations Used To Determine the Trap-Assisted Auger Recombination Coefficients Ti Using Equation 15a.
| i | Ni | di1 | di2 | bi | ||||
|---|---|---|---|---|---|---|---|---|
| 1 | 13 | –260 | ||||||
| 2 | 0.5(33 – 15σL) | 0.5(33 – 15σL) | ||||||
| 3 | ||||||||
|
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| 4 | ||||||||
Here, Eg is the band gap, Et is the trap depth with respect to the conduction band, σ = mh/me is the ratio of the hole and electron effective mass, and σL = 1/σ. In this form, the notation is valid for free electrons in the conduction band interacting with defect states. For free holes in the valence band, Et, σ, and σL have to be adjusted accordingly.
