Table 2. Comparison of Responsivity of the Present Photodetector to that of Reported Ones.
| material | band gap (eV) | operating wavelength (nm) | responsivity (A/W) | electronic quantum efficiency | response time (s) | references |
|---|---|---|---|---|---|---|
| mixed-dimensionality TiS3/Si p–n junction | >1050 | 34.8 × 10 –3 | 20 × 10 –3 | (18) | ||
| multilayer WS2 | 1.96 (direct) | 635 | 9.2 × 10–5 | 5.3 × 10 –3 | (58) | |
| multilayer InSe | 1.4 (direct) | 885 | 3.47 × 10–4 | 488 × 10–2 | (59) | |
| liquid-phase exfoliated TiS3 | 1.02 (direct) | 405 | 3.8 × 10–3 | 8 ± 2 | (73) | |
| graphene | 800 | 1 × 10–2 | 10–12 | (60) | ||
| multilayer GaSe | 2.11 (indirect) | 590 | 1.7 × 10–2 | 5.2 | (61) | |
| microstructured Si | 1.1 (indirect) | 1130 | 1.19 × 102 | (62) | ||
| In2Se3 nanosheet | 1.3 (direct) | 955 | 3.95 × 102 | 1.63 × 105 | 1.8 × 10–2 | (63) |
| horizontally aligned TiS3 nanoribbons | 1.1 (direct) | 1064 | 5.22 × 102 | 6.08 × 102 | 1.53 | present work |