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. 2019 Jun 25;31(14):5104–5115. doi: 10.1021/acs.chemmater.9b01008

Figure 1.

Figure 1

(a) Apparent film thickness (tApp) as a function of number of PEALD cycles for the H2S and H2 + H2S processes at a deposition temperature of 300 °C, as determined from in situ SE measurements. The error bars are a cumulative sum of the measurement error and SE model fitting error. (b) GPCRBS (atoms/nm2) in terms of number of deposited W and S atoms showing an analogous trend as GPCSE for the H2S and H2 + H2S processes. GPCRBS was determined after 400 PEALD cycles. (c) Thickness uniformity map of WS2 films (H2S process) on a 4 in. SiO2/Si wafer, as determined from room-temperature ex situ SE measurements. The black squares on the wafer represent the SE measurement points with a 5 mm edge exclusion.