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. 2019 Jun 25;31(14):5104–5115. doi: 10.1021/acs.chemmater.9b01008

Figure 4.

Figure 4

(a) Gonio-XRD patterns of WS2 films (tApp ∼ 32 nm) grown using H2S and H2 + H2S PEALD processes. The powder diffractogram of 2H-WS2 is included as a reference65 and is represented by vertical bars at the bottom of the figure. (b–g) HAADF-STEM images of edge-enriched WS2 films (tApp ∼ 32 nm): (b) Top-view and (c, d) cross-sectional images of WS2 grown using the H2S process. The edge termination of the WS2 layers is highlighted with a rectangle in (d). (e) Top-view and (f, g) cross-sectional images of WS2 grown using the H2 + H2S process. Dashed lines follow the triangular-fin outline in (g).