Table 1.
Cx43 hemichannels from control and preconditioned C6–Cx43 cells
| A (pA) | γ (pS) | Asub (pA) | γsub (pS) | Po | τo (ms) | τc1 (ms) | τc2 (ms) | |
|---|---|---|---|---|---|---|---|---|
| Con | 15.5 ± 0.3 | 180 ± 3.0 | 1.4 ± 0.1 | 15 ± 0.5 | 0.008 ± 0.003 | 5.2 ± 0.9 | 3.4 ± 1.0 | 147 ± 30 |
| Prec | 15.9 ± 0.4 | 180 ± 2.5 | 1.4 ± 0.1 | 15 ± 0.6 | 0.016 ± 0.003 | 5.9 ± 0.8 | 2.6 ± 0.7 | 104 ± 34 |
The putative Cx43 hemichannel had a full opening conductance of 180 ± 3 pS (n = 10 patches). A subconductance status with slowly gating and long opening property was occasionally observed (Fig. 3D, bottom enlarged trace). The conductance of the slowly gating status was 15 ± 0.5 pS (γsub) smaller than the slowly gating status for whole Cx43 gap-junction channels reported previously by other groups (Valiunas et al., 1997), suggesting that the slow gating status of Cx43 channels is variable under different conditions. The fast gating conductance was 165 ± 3 pS, which is approximately double of the fast gating gap-junction channel current (85 pS) (Bukauskas and Verselis, 2004).