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Gate voltage (VG)-dependent, 1 V source-drain bias, source-drain current (Ids(VG) of ZnO nanowire FET under ambient conditions for Ids(VG) sweep ranges (a) ±60 V, ±40 V, ±20 V, and ±10 V for sweeps labelled 1–4, respectively. (b) sweep range ±10 V for a doped and (c) undoped nanowire, and (d) the latter in high vacuum. Reprinted with permission from American Institute of Physics [21].
