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. 2019 Jul 12;12(14):2242. doi: 10.3390/ma12142242

Figure 4.

Figure 4

CL spectra of ZnO nanorod junctions with p-type GaN substrates measured in cross-section. (a) Inset shows a characteristic cross-sectional SEI of the heterostructure with blue, red, and black (from top to bottom) spots indicating spatial locations within the heterostructure corresponding to the blue, red, and black (from top to bottom) spectra in each of the figures. The 625–670 nm (1.85–2 eV) defect intensities relative to the 375 nm (3.3 eV) NBE peak emission increase from (a) 1:1 M to (b) 1:3 M to (c) 1:5 M. With permission from American Institute of Physics [47].